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Resonant tunneling in small current-...
~
Schmidt, John Mark.
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Resonant tunneling in small current-biased Josephson junctions.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Resonant tunneling in small current-biased Josephson junctions./
作者:
Schmidt, John Mark.
面頁冊數:
174 p.
附註:
Source: Dissertation Abstracts International, Volume: 55-09, Section: B, page: 3959.
Contained By:
Dissertation Abstracts International55-09B.
標題:
Physics, Condensed Matter. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9504990
Resonant tunneling in small current-biased Josephson junctions.
Schmidt, John Mark.
Resonant tunneling in small current-biased Josephson junctions.
- 174 p.
Source: Dissertation Abstracts International, Volume: 55-09, Section: B, page: 3959.
Thesis (Ph.D.)--University of California, Berkeley, 1994.
The effects of resonant tunneling between bound quantum states of a macroscopic system is studied both theoretically and experimentally. The macroscopic system studied theoretically is the current-biased Josephson tunnel junction. Several novel effects are predicted to arise as a result of resonant tunneling, including a series of voltage peaks along the supercurrent branch of the current-voltage characteristic, and the enhancement of the rate of escape from the zero voltage state to the voltage state at particular values of bias current. A theoretical model is developed which is used to estimate the magnitude and duration of the voltage peaks, and to estimate the enhancement of the escape rate, which appears as peaks in the rate as a function of bias current.Subjects--Topical Terms:
1018743
Physics, Condensed Matter.
Resonant tunneling in small current-biased Josephson junctions.
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The effects of resonant tunneling between bound quantum states of a macroscopic system is studied both theoretically and experimentally. The macroscopic system studied theoretically is the current-biased Josephson tunnel junction. Several novel effects are predicted to arise as a result of resonant tunneling, including a series of voltage peaks along the supercurrent branch of the current-voltage characteristic, and the enhancement of the rate of escape from the zero voltage state to the voltage state at particular values of bias current. A theoretical model is developed which is used to estimate the magnitude and duration of the voltage peaks, and to estimate the enhancement of the escape rate, which appears as peaks in the rate as a function of bias current.
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An experimental investigation was carried out in an attempt to observe the predicted peaks in the escape rate distribution. The device used in this study was the current-biased DC SQUID, which is shown to be in the appropriate limit dynamically equivalent to a Josephson junction with an adjustable critical current. DC SQUIDs with capacitances of 15 to 37 fF and critical currents of 160 to 300 nA were fabricated from aluminum using electron-beam lithography and bilayer resist shadow mask techniques. Electrical contact to each SQUID was made through high resistance thin film leads located on the substrate. These resistors provided a high impedance at the plasma frequency which is shown to be necessary for the isolation of the SQUID from its electromagnetic environment. Measurements were carried out on a dilution refrigerator at temperatures as low as 19 mK. No evidence was found for resonant tunneling. This is attributed to effective temperatures of hundreds of millikelvin, as indicated by the observed SQUID behavior. The behavior is well explained by a heating model where the high effective temperatures are generated by the ohmic heating of the electron gas of the isolation resistors, which decouples from the phonon system in an effect known as the hot electron effect. The prospects for further theoretical and experimental research is discussed.
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http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9504990
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