Fabrication and device characterizat...
Gregory, John Walter.

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  • Fabrication and device characterization of the barium magnesium tetrafluorine/silicon dioxide ferroelectric field-effect transistor.
  • 紀錄類型: 書目-電子資源 : Monograph/item
    正題名/作者: Fabrication and device characterization of the barium magnesium tetrafluorine/silicon dioxide ferroelectric field-effect transistor./
    作者: Gregory, John Walter.
    面頁冊數: 156 p.
    附註: Source: Dissertation Abstracts International, Volume: 53-11, Section: B, page: 5888.
    Contained By: Dissertation Abstracts International53-11B.
    標題: Engineering, Electronics and Electrical. -
    電子資源: http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9307246
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