東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Optical properties of silicon invers...

Wei, Hong.

FindBook

Google Book

Amazon

博客來

Optical properties of silicon inverse opals.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Optical properties of silicon inverse opals./
作者:	Wei, Hong.
面頁冊數:	120 p.
附註:	Source: Dissertation Abstracts International, Volume: 68-02, Section: B, page: 1243.
Contained By:	Dissertation Abstracts International68-02B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3250169

Optical properties of silicon inverse opals.
Wei, Hong.

Optical properties of silicon inverse opals. - 120 p.

Source: Dissertation Abstracts International, Volume: 68-02, Section: B, page: 1243.

Thesis (Ph.D.)--University of Minnesota, 2007.

Silicon inverse opals are artificial structures in which nearly monodisperse, close-packed air bubbles are embedded in a silicon matrix. If properly tailored, this structure can exhibit a photonic band gap (PBG) in the near infrared spectral region. The PBG can block light propagation in any direction, allowing the control of light flow in the material. Silicon inverse opals can be fabricated by infiltrating amorphous silicon into silica colloidal crystals and then etching away the silica. In this thesis, the structural defects of silica colloidal crystals and the optical properties of silicon inverse opals are studied.Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Optical properties of silicon inverse opals.
LDR:03275nmm 2200301 4500 001 1834496
005 20071119145704.5
008 130610s2007 eng d
035 $a (UMI)AAI3250169
035 $a AAI3250169
040 $a UMI $c UMI
100 1 $a Wei, Hong. $3 1058150
245 1 0 $a Optical properties of silicon inverse opals.
300 $a 120 p.
500 $a Source: Dissertation Abstracts International, Volume: 68-02, Section: B, page: 1243.
500 $a Adviser: David Norris.
502 $a Thesis (Ph.D.)--University of Minnesota, 2007.
520 $a Silicon inverse opals are artificial structures in which nearly monodisperse, close-packed air bubbles are embedded in a silicon matrix. If properly tailored, this structure can exhibit a photonic band gap (PBG) in the near infrared spectral region. The PBG can block light propagation in any direction, allowing the control of light flow in the material. Silicon inverse opals can be fabricated by infiltrating amorphous silicon into silica colloidal crystals and then etching away the silica. In this thesis, the structural defects of silica colloidal crystals and the optical properties of silicon inverse opals are studied.
520 $a First, by using laser-scanning confocal microscopy, the concentration and distribution of stacking faults and vacancies were quantified in silica colloidal crystals. It's shown that silica colloidal crystals show strong tendency toward face-center-cubic structure with the vacancy density as small as 5 x 10-4.
520 $a Second, by combining optical microscopy and Fourier Transform Infrared (FTIR) spectroscopy, the transmission and reflection spectra of silicon inverse opals along the [111] direction were measured. Combined with the calculation of transmission and reflection spectra by Transfer Matrix Methods, it is concluded that the strong light attenuation in silicon inverse opals is due to the enhanced absorption (>600%) in silicon materials.
520 $a Third, by using optical pump-probe techniques, the photo-induced ultra-fast reflection changes in silicon inverse opals were examined. The pump-generated free carriers cause the reflection in the band gap region to change after &sim;0.5 ps. For the first few ps, the main effect is a decrease in reflectivity due to nonlinear absorption. After &sim;5 ps, this effect disappears and an unexpected blue spectral shift is seen in the photonic band gap. The refractive index decreases due to optically-induced strain born the thermal expansion mismatch between silicon and its native oxide.
520 $a Finally, by infiltrating silicon inverse opals with PbSe semiconductor nanocrystals, the modification of photoluminescence of species embedded inside a PBG structure was explored. Although a strong attenuation of the photoluminescence of PbSe semiconductor nanocrystals is observed in the PBG wavelength, direct measurement of the photoluminescence decay rate as affected by the PBG is not successful. Higher performance infrared detector is required.
590 $a School code: 0130.
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0794
710 2 0 $a University of Minnesota. $3 676231
773 0 $t Dissertation Abstracts International $g 68-02B.
790 1 0 $a Norris, David, $e advisor
790 $a 0130
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3250169