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Observations on the kinetics of rela...

Kutka, Robert Vincent.

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Observations on the kinetics of relaxation in epitaxial films grown on conventional and compliant substrates: A continuum simulation of dislocation glide near an interface.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Observations on the kinetics of relaxation in epitaxial films grown on conventional and compliant substrates: A continuum simulation of dislocation glide near an interface./
Author:	Kutka, Robert Vincent.
Description:	179 p.
Notes:	Source: Dissertation Abstracts International, Volume: 59-04, Section: B, page: 1728.
Contained By:	Dissertation Abstracts International59-04B.
Subject:	Applied Mechanics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9830473
ISBN:	9780591832068

Observations on the kinetics of relaxation in epitaxial films grown on conventional and compliant substrates: A continuum simulation of dislocation glide near an interface.
Kutka, Robert Vincent.

Observations on the kinetics of relaxation in epitaxial films grown on conventional and compliant substrates: A continuum simulation of dislocation glide near an interface. - 179 p.

Source: Dissertation Abstracts International, Volume: 59-04, Section: B, page: 1728.

Thesis (Ph.D.)--Brown University, 1998.

A numerical procedure for simulating the glide of arbitrarily shaped dislocation loops near a free surface, a bi-elastic interface, and an elastic/viscoelastic bi-material interface is developed based upon a compact line-integral representation of the stress field for these cases. The simulation is applied to several issues related to the kinetics of mismatch strain relaxation in films grown on conventional substrates, including surface half-loop nucleation, threading dislocation propagation, and the interaction between a threading dislocation and a misfit dislocation in its path. The kinetics of dislocation removal in silicon-on-insulator complaint substrate systems is also investigated. It is demonstrated that time required for the transference of strain from the film to the compliant layer during a post-growth anneal is much too long explain the observed reduction in dislocation density and the resulting microstructure. The microstructure consists of dislocations which thread through the compliant layer from the film/compliant layer interface to the silicon dioxide bonding layer, while no threading segments are observed in the film. A mechanism by which misfit dislocation segments are drawn out of the system through viscous relaxation of a viscoelastic bonding layer is proposed and evaluated. It is concluded that this process may occur at a much faster rate than the transference of strain. The process leads to threading segments in the compliant layer which may subsequently retreat, removing misfit dislocations from the system. The kinetics of threading dislocation glide along the compliant layer/viscoelastic bonding layer interface is also considered. The accommodation of dislocations by the bonding layer will unlock metastable dislocation configurations in film, promoting a decrease in threading segment density in the film. Such threading segments tend to degrade the performance of certain semiconductor devices fabricated by means of strained-layer epitaxy.

ISBN: 9780591832068Subjects--Topical Terms:

1018410
Applied Mechanics.

Observations on the kinetics of relaxation in epitaxial films grown on conventional and compliant substrates: A continuum simulation of dislocation glide near an interface.
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035 $a (UMI)AAI9830473
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100 1 $a Kutka, Robert Vincent. $3 1921204
245 1 0 $a Observations on the kinetics of relaxation in epitaxial films grown on conventional and compliant substrates: A continuum simulation of dislocation glide near an interface.
300 $a 179 p.
500 $a Source: Dissertation Abstracts International, Volume: 59-04, Section: B, page: 1728.
500 $a Adviser: L. B. Freund.
502 $a Thesis (Ph.D.)--Brown University, 1998.
520 $a A numerical procedure for simulating the glide of arbitrarily shaped dislocation loops near a free surface, a bi-elastic interface, and an elastic/viscoelastic bi-material interface is developed based upon a compact line-integral representation of the stress field for these cases. The simulation is applied to several issues related to the kinetics of mismatch strain relaxation in films grown on conventional substrates, including surface half-loop nucleation, threading dislocation propagation, and the interaction between a threading dislocation and a misfit dislocation in its path. The kinetics of dislocation removal in silicon-on-insulator complaint substrate systems is also investigated. It is demonstrated that time required for the transference of strain from the film to the compliant layer during a post-growth anneal is much too long explain the observed reduction in dislocation density and the resulting microstructure. The microstructure consists of dislocations which thread through the compliant layer from the film/compliant layer interface to the silicon dioxide bonding layer, while no threading segments are observed in the film. A mechanism by which misfit dislocation segments are drawn out of the system through viscous relaxation of a viscoelastic bonding layer is proposed and evaluated. It is concluded that this process may occur at a much faster rate than the transference of strain. The process leads to threading segments in the compliant layer which may subsequently retreat, removing misfit dislocations from the system. The kinetics of threading dislocation glide along the compliant layer/viscoelastic bonding layer interface is also considered. The accommodation of dislocations by the bonding layer will unlock metastable dislocation configurations in film, promoting a decrease in threading segment density in the film. Such threading segments tend to degrade the performance of certain semiconductor devices fabricated by means of strained-layer epitaxy.
590 $a School code: 0024.
650 4 $a Applied Mechanics. $3 1018410
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0346
690 $a 0794
710 2 0 $a Brown University. $3 766761
773 0 $t Dissertation Abstracts International $g 59-04B.
790 1 0 $a Freund, L. B., $e advisor
790 $a 0024
791 $a Ph.D.
792 $a 1998
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9830473