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Rapid nano-patterning of polymeric t...

Liu, Yajing.

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Rapid nano-patterning of polymeric thin films with a gallium(+) focused ion beam.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Rapid nano-patterning of polymeric thin films with a gallium(+) focused ion beam./
作者:	Liu, Yajing.
面頁冊數:	221 p.
附註:	Source: Dissertation Abstracts International, Volume: 66-01, Section: B, page: 0494.
Contained By:	Dissertation Abstracts International66-01B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3161255
ISBN:	9780496948727

Rapid nano-patterning of polymeric thin films with a gallium(+) focused ion beam.
Liu, Yajing.

Rapid nano-patterning of polymeric thin films with a gallium(+) focused ion beam. - 221 p.

Source: Dissertation Abstracts International, Volume: 66-01, Section: B, page: 0494.

Thesis (Ph.D.)--University of Virginia, 2005.

The main objective of this thesis is to explore the materials and engineering issues during ultra-rapid focused ion beam (FIB) direct patterning of Poly(methyl methacrylate) (PMMA) and other materials with an aim to understand the mechanism behind the abnormally high material removal rate for PMMA. This was achieved by studying the effects of the systematic FIB experimental parameters on the material removal rate of PMMA, and exploring the fundamental chemical structure changes during ion irradiation. We also explore application of the ultra-high sputtering yield of PMMA to maximizing the patterning throughput for microcontact printing (muCP), using an all-polymer transfer process, demonstrating final patterning rates that are 80 times faster than using Si masters.

ISBN: 9780496948727Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Rapid nano-patterning of polymeric thin films with a gallium(+) focused ion beam.
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245 1 0 $a Rapid nano-patterning of polymeric thin films with a gallium(+) focused ion beam.
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500 $a Source: Dissertation Abstracts International, Volume: 66-01, Section: B, page: 0494.
500 $a Adviser: Robert Hull.
502 $a Thesis (Ph.D.)--University of Virginia, 2005.
520 $a The main objective of this thesis is to explore the materials and engineering issues during ultra-rapid focused ion beam (FIB) direct patterning of Poly(methyl methacrylate) (PMMA) and other materials with an aim to understand the mechanism behind the abnormally high material removal rate for PMMA. This was achieved by studying the effects of the systematic FIB experimental parameters on the material removal rate of PMMA, and exploring the fundamental chemical structure changes during ion irradiation. We also explore application of the ultra-high sputtering yield of PMMA to maximizing the patterning throughput for microcontact printing (muCP), using an all-polymer transfer process, demonstrating final patterning rates that are 80 times faster than using Si masters.
520 $a A 30 keV high resolution Ga+ focused ion beam has been used to create topographic patterns in PMMA thin films with speeds up to 1 x 105 features per second (20 mus per feature). This corresponds to a material removal rate of about 1000 mum3/nC (10,000 atoms/ion assuming the density of the remaining material does not change during ion bombardment). We find no other reported comparable material removal rates in the literature within even two orders of magnitude. Several advantages characterize this new FIB patterning process, including the by-passing of a chemical etching/development process, a very quick turnaround time from concept and design to fabrication of features, and most importantly, high throughputs that offer much higher pattern writing speeds. Systematic parameters that have been identified to affect the PMMA material removal rates include the incident angle of the ion beam, ion beam current density, and ion beam energy, although none of these parameters affect the sputtering rate by as much as one order of magnitude. The observed sputtering yield is apparently highly depth dependent, with a strong surface enhancement, and the re-exposure to the atmosphere of an already irradiated area confirmed the material removal rate is indeed depth dependent rather than controlled by surface modification by exposure to air. It is found that the temperature of the substrate has great effect on the sputtered PMMA's topography. Surface craters are created at sample temperatures lower than the PMMA glass transition temperature. Hillocks are produced when the temperature of PMMA thin films is increased above the glass transition temperature during ion irradiation.
520 $a The fundamental mechanisms of the high material removal rate of PMMA have been explored using Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectroscopy (SIMS), Nuclear Magnetic Resonance (NMR) Spectroscopy and Finite Element Analysis (FEA) simulations. (Abstract shortened by UMI.)
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650 4 $a Chemistry, Radiation. $3 1017804
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