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Synthesis, electronic properties and...

Li, Chao.

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Synthesis, electronic properties and applications of oxide nanowires.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Synthesis, electronic properties and applications of oxide nanowires./
作者:	Li, Chao.
面頁冊數:	128 p.
附註:	Source: Dissertation Abstracts International, Volume: 66-11, Section: B, page: 6165.
Contained By:	Dissertation Abstracts International66-11B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3196843
ISBN:	9780542427183

Synthesis, electronic properties and applications of oxide nanowires.
Li, Chao.

Synthesis, electronic properties and applications of oxide nanowires. - 128 p.

Source: Dissertation Abstracts International, Volume: 66-11, Section: B, page: 6165.

Thesis (Ph.D.)--University of Southern California, 2005.

Two types of oxide nanowires were synthesized and systematically studied. Single-crystalline Indium oxide nanowires were synthesized using a laser ablation method and characterized using various techniques to confirm their composition and single crystalline structures. Precise control over the nanowire diameter down to 10 nm was achieved by using mono-dispersed gold clusters as the catalytic nanoparticles. These nanowires were further exploited to work as field effect transistors with on/off ratios as high as 2 x 104. Photodetectors were also demonstrated based on these nanowire transistors for ultraviolet light.

ISBN: 9780542427183Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Synthesis, electronic properties and applications of oxide nanowires.
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245 1 0 $a Synthesis, electronic properties and applications of oxide nanowires.
300 $a 128 p.
500 $a Source: Dissertation Abstracts International, Volume: 66-11, Section: B, page: 6165.
500 $a Adviser: Chongwu Zhou.
502 $a Thesis (Ph.D.)--University of Southern California, 2005.
520 $a Two types of oxide nanowires were synthesized and systematically studied. Single-crystalline Indium oxide nanowires were synthesized using a laser ablation method and characterized using various techniques to confirm their composition and single crystalline structures. Precise control over the nanowire diameter down to 10 nm was achieved by using mono-dispersed gold clusters as the catalytic nanoparticles. These nanowires were further exploited to work as field effect transistors with on/off ratios as high as 2 x 104. Photodetectors were also demonstrated based on these nanowire transistors for ultraviolet light.
520 $a We have further demonstrated multilevel molecular memories based on nanowires functionalized with a self-assembled monolayer of redox active molecular wires, where the bit was represented by the charge stored in the redox molecules and the nanowire conductance was used as the readout. In addition, the ultra high surface-to-volume ratios of nanowires enabled us to explore using In 2O3 nanowires as chemical and bio sensors. Upon exposure to a small amount of NO2 or NH3, the nanowire transistors showed a decrease in conductance up to six or five orders of magnitude, in addition to substantial shifts in the threshold gate voltage. Our devices exhibited significantly improved chemical sensing performance compared to existing solid-state sensors in many aspects, including the sensitivity, the selectivity, the response time and the lowest detectable concentrations. We also applied In2O3 nanowires as protein and DNA sensors and demonstrated great promise for the selective detection of desired biomolecules for health care and biomedical research.
520 $a We have carried out extensive studies on the synthesis and electronic properties of transition metal oxide nanowires based on La0.67Ca 0.33MnO3 (LCMO) and La0.67Sr0.33MnO 3 (LSMO). Key to our success is the growth of vertically aligned single-crystalline MgO nanowires, which worked as excellent templates for epitaxial deposition of the desired transition metal oxides and led to high-quality core-shell nanowires. Transport studies on LCMO and LSMO nanowires have revealed the remarkable persistence of metal-insulator transition and magnetoresistance down to nanometer scale. Our work paves the way for novel applications based on these fascinating materials.
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791 $a Ph.D.
792 $a 2005
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