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Low dielectric constant thin film hi...

Song, Ge.

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Low dielectric constant thin film high frequency characterization technique.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Low dielectric constant thin film high frequency characterization technique./
作者:	Song, Ge.
面頁冊數:	166 p.
附註:	Source: Dissertation Abstracts International, Volume: 62-09, Section: B, page: 4153.
Contained By:	Dissertation Abstracts International62-09B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3026707
ISBN:	9780493390406

Low dielectric constant thin film high frequency characterization technique.
Song, Ge.

Low dielectric constant thin film high frequency characterization technique. - 166 p.

Source: Dissertation Abstracts International, Volume: 62-09, Section: B, page: 4153.

Thesis (Ph.D.)--University of California, Davis, 2001.

Low dielectric constant thin films are required by semiconductor industry to meet the challenge of improving integrated circuit (IC) speed. As the device feature sizes shrink (<250 nm), the interconnect delay is the dominant factor determining the speed of IC. Low dielectric constant thin films will improve the IC speed by reducing the capacitance and crosstalk between metal-to-metal interconnections. An important component in the development of low dielectric constant thin film materials is the characterization of their dielectric properties in the microwave frequency range. While the dielectric properties of thin film materials have been studied extensively at low frequencies (<10 MHz), no measurement technique exists that measure directly the thin films in the microwave regime.

ISBN: 9780493390406Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Low dielectric constant thin film high frequency characterization technique.
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245 1 0 $a Low dielectric constant thin film high frequency characterization technique.
300 $a 166 p.
500 $a Source: Dissertation Abstracts International, Volume: 62-09, Section: B, page: 4153.
500 $a Adviser: Andre Knuesen.
502 $a Thesis (Ph.D.)--University of California, Davis, 2001.
520 $a Low dielectric constant thin films are required by semiconductor industry to meet the challenge of improving integrated circuit (IC) speed. As the device feature sizes shrink (<250 nm), the interconnect delay is the dominant factor determining the speed of IC. Low dielectric constant thin films will improve the IC speed by reducing the capacitance and crosstalk between metal-to-metal interconnections. An important component in the development of low dielectric constant thin film materials is the characterization of their dielectric properties in the microwave frequency range. While the dielectric properties of thin film materials have been studied extensively at low frequencies (<10 MHz), no measurement technique exists that measure directly the thin films in the microwave regime.
520 $a This dissertation presents a new measurement technique to characterize the thin film dielectric properties (dielectric constant and dielectric loss tangent) in the frequency range from 1 GHz to 10 GHz. The technique has been used to characterize the permittivity in the microwave regime of a variety of polymers, as well as new low k-dielectric films (SiLK) developed by Dow Chemical and a new generation of low k-dielectrics based on dendrimer glasses under development at IBM Almaden Research Center.
590 $a School code: 0029.
650 4 $a Engineering, Electronics and Electrical. $3 626636
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710 2 0 $a University of California, Davis. $3 1018682
773 0 $t Dissertation Abstracts International $g 62-09B.
790 1 0 $a Knuesen, Andre, $e advisor
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791 $a Ph.D.
792 $a 2001
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3026707