東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

High temperature electrical behaviou...

Manca, Jean Vittorio.

FindBook

Google Book

Amazon

博客來

High temperature electrical behaviour and failure mechanisms of glass-ceramic dielectrics in thick film multilayers.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	High temperature electrical behaviour and failure mechanisms of glass-ceramic dielectrics in thick film multilayers./
作者:	Manca, Jean Vittorio.
面頁冊數:	121 p.
附註:	Source: Dissertation Abstracts International, Volume: 56-01, Section: B, page: 0299.
Contained By:	Dissertation Abstracts International56-01B.
標題:	Physics, Electricity and Magnetism. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9517687

High temperature electrical behaviour and failure mechanisms of glass-ceramic dielectrics in thick film multilayers.
Manca, Jean Vittorio.

High temperature electrical behaviour and failure mechanisms of glass-ceramic dielectrics in thick film multilayers. - 121 p.

Source: Dissertation Abstracts International, Volume: 56-01, Section: B, page: 0299.

Thesis (Ph.D.)--Limburgs Universitair Centrum (Belgium), 1994.

Glass-ceramics are polycrystalline materials obtained from glasses after an appropriate thermal treatment. They are of importance because they offer combinations of physical properties not available with other classes of materials. Recently, their technological importance has also been recognized in the field of microelectronics. Since the end of the eighties great effort has been spent in the development of glass-ceramics suitable as dielectrics in thick film multilayer systems. The construction of complex thick film multilayers can be seriously obstructed by the occurrence of failures during production at high temperatures, and therefore a reliable dielectric is needed. The most important high temperature failures in thick film multilayers are shorting and blistering of the dielectric in between two metal layers. The basic physico-chemical processes causing these failures are unsufficiently understood. In particular, the correlation between electrical properties of the glass-ceramic material and the occurrence of these failures is not clear. The temperature region of interest in the study of these failures ranges from room temperature up to 850Subjects--Topical Terms:

1019535
Physics, Electricity and Magnetism.

High temperature electrical behaviour and failure mechanisms of glass-ceramic dielectrics in thick film multilayers.
LDR:04359nmm 2200325 4500 001 1821717
005 20061114122254.5
008 130610s1994 eng d
035 $a (UnM)AAI9517687
035 $a AAI9517687
040 $a UnM $c UnM
100 1 $a Manca, Jean Vittorio. $3 1910883
245 1 0 $a High temperature electrical behaviour and failure mechanisms of glass-ceramic dielectrics in thick film multilayers.
300 $a 121 p.
500 $a Source: Dissertation Abstracts International, Volume: 56-01, Section: B, page: 0299.
500 $a Promoters: L. M. Stals; L. De Schepper.
502 $a Thesis (Ph.D.)--Limburgs Universitair Centrum (Belgium), 1994.
520 $a Glass-ceramics are polycrystalline materials obtained from glasses after an appropriate thermal treatment. They are of importance because they offer combinations of physical properties not available with other classes of materials. Recently, their technological importance has also been recognized in the field of microelectronics. Since the end of the eighties great effort has been spent in the development of glass-ceramics suitable as dielectrics in thick film multilayer systems. The construction of complex thick film multilayers can be seriously obstructed by the occurrence of failures during production at high temperatures, and therefore a reliable dielectric is needed. The most important high temperature failures in thick film multilayers are shorting and blistering of the dielectric in between two metal layers. The basic physico-chemical processes causing these failures are unsufficiently understood. In particular, the correlation between electrical properties of the glass-ceramic material and the occurrence of these failures is not clear. The temperature region of interest in the study of these failures ranges from room temperature up to 850 $\ sp\circ
520 $a Since ionic migration is believed to occur during failure formation, electrical conductivity is an interesting property for closer observation. In order to study the required property a new measurement method has been developed, termed as the in-situ leakage current measurement technique with voltage polarity switching. With this technique it has been possible to determine the conductivity in more detail and with less error. The submission of the obtained conductivity results to an Arrhenius analysis and the identification of the charge carriers with various analytical techniques have led to improved insights concerning the occurring conduction mechanisms.
520 $a Appropriate test structures have been prepared for a set of eight different dielectric materials. Some of these materials are known to have an excellent failure resistance, while other rapidly fail. The various dielectrics are presented along with their microstructural properties obtained with several analytical techniques. The available variety of dielectric materials allows a systematic study of the corresponding high temperature electrical properties and the eventual relation with their predisposition to failure formation. Also the influence of the electrode material on the electrical properties and the occurrence of failures has been investigated.
520 $a In this work two other techniques, impedance spectroscopy and e.m.f.'s-measurements, have been added to the available in-situ electrical measurement techniques. The in-situ impedance spectroscopy measurements have been performed in the first place to validate the results obtained with the leakage current measurement technique, but moreover deliver information about conduction mechanisms and interface reactions. The scope of the in-situ e.m.f.-measurements has been to investigate the existence of the 'battery effect' by measuring the eventual formation of galvanic effects in mixed metallurgy multilayers as postulated by Gilles et al in 1989. Related to these measurements some new experiments will be described which have led to a dispell of the fallacies concerning the true nature of the studied failure mechanisms.
590 $a School code: 1134.
650 4 $a Physics, Electricity and Magnetism. $3 1019535
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0607
690 $a 0611
690 $a 0794
710 2 0 $a Limburgs Universitair Centrum (Belgium). $3 1257259
773 0 $t Dissertation Abstracts International $g 56-01B.
790 1 0 $a Stals, L. M., $e advisor
790 1 0 $a De Schepper, L., $e advisor
790 $a 1134
791 $a Ph.D.
792 $a 1994
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9517687