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Highly efficient light emission in g...

Chen, Lu.

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Highly efficient light emission in group-III nitride nanostructures.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Highly efficient light emission in group-III nitride nanostructures./
作者:	Chen, Lu.
面頁冊數:	136 p.
附註:	Source: Dissertation Abstracts International, Volume: 66-05, Section: B, page: 2656.
Contained By:	Dissertation Abstracts International66-05B.
標題:	Physics, Optics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3174583
ISBN:	0542126974

Highly efficient light emission in group-III nitride nanostructures.
Chen, Lu.

Highly efficient light emission in group-III nitride nanostructures. - 136 p.

Source: Dissertation Abstracts International, Volume: 66-05, Section: B, page: 2656.

Thesis (Ph.D.)--Brown University, 2005.

Sizes of electronic and photonic devices are decreasing drastically in recent years in order to increase the degree of integration for large-capacity and ultrahigh-speed signal transmission and information processing. Nanophotonics is a new research frontier interacting with widespread scientific and technological areas. Group-III nitride material system, as the fundamental base for blue/NUV lighting and laser industry, is one of the favorite media to realize nanophotonic devices due to its endurance of high defect density and low non-radiative surface recombination. Experimental studies of highly efficient light emission from nanophotonic devices based on group-III nitride material are presented in this thesis.

ISBN: 0542126974Subjects--Topical Terms:

1018756
Physics, Optics.

Highly efficient light emission in group-III nitride nanostructures.
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245 1 0 $a Highly efficient light emission in group-III nitride nanostructures.
300 $a 136 p.
500 $a Source: Dissertation Abstracts International, Volume: 66-05, Section: B, page: 2656.
500 $a Adviser: Arto V. Nurmikko.
502 $a Thesis (Ph.D.)--Brown University, 2005.
520 $a Sizes of electronic and photonic devices are decreasing drastically in recent years in order to increase the degree of integration for large-capacity and ultrahigh-speed signal transmission and information processing. Nanophotonics is a new research frontier interacting with widespread scientific and technological areas. Group-III nitride material system, as the fundamental base for blue/NUV lighting and laser industry, is one of the favorite media to realize nanophotonic devices due to its endurance of high defect density and low non-radiative surface recombination. Experimental studies of highly efficient light emission from nanophotonic devices based on group-III nitride material are presented in this thesis.
520 $a A systematic approach of fabricating semiconductor nanoscale devices with feature size down to 40nm scale is described in this work. The success of the nanofabrication of blue light emitting diodes based on group-III nitride material is demonstrated.
520 $a Strong light emission from InGaN quantum wells despite the large surface-to-volume ratio in nanoscale devices has been observed. This is in clear contrast to "conventional" long wavelength semiconductors such as GaAs and InP materials. Furthermore the guided modes in semiconductor thin film can be modified through introducing periodic patterns to the planar structures. The existence of photonic bandgap in a deliberately designed "photonic crystal" opens up opportunities to extract more emitting light to free space and greatly improve the external quantum efficiency. Eight-folded enhancement of light emission efficiency has been demonstrated in experiments. Advantages of nanophotonic devices based on group-III nitride material have been demonstrated. They are of great interest in scientific research, while their phenomenal properties can be beneficial to the development of lighting and laser technology.
590 $a School code: 0024.
650 4 $a Physics, Optics. $3 1018756
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710 2 0 $a Brown University. $3 766761
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