語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Dynamics and stability of nanostruct...
~
Ramasubramaniam, Ashwin.
FindBook
Google Book
Amazon
博客來
Dynamics and stability of nanostructures on crystal surfaces.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Dynamics and stability of nanostructures on crystal surfaces./
作者:
Ramasubramaniam, Ashwin.
面頁冊數:
200 p.
附註:
Source: Dissertation Abstracts International, Volume: 66-05, Section: B, page: 2790.
Contained By:
Dissertation Abstracts International66-05B.
標題:
Engineering, Mechanical. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3174661
ISBN:
0542128578
Dynamics and stability of nanostructures on crystal surfaces.
Ramasubramaniam, Ashwin.
Dynamics and stability of nanostructures on crystal surfaces.
- 200 p.
Source: Dissertation Abstracts International, Volume: 66-05, Section: B, page: 2790.
Thesis (Ph.D.)--Brown University, 2005.
Morphological stability and evolution of nanostructures on crystalline surfaces is studied analytically and numerically. Crystalline surfaces present modeling challenges owing to the infinite stiffness of facets. This work uses variational formulations that naturally handle both rough and singular orientations. The physics of crystallographic steps is used to provide a fundamental basis for the energetics and kinetics of morphological evolution. Investigations are pursued to understand recent experiments where surface energy anisotropy is seen to play an important role. Specifically, the relaxation behavior of surface undulations, the evolution of grain-boundary grooves and Stranski-Krastanov growth in heteroepitaxial systems are studied. The relaxation of surface gratings is studied in conserved and non-conserved kinetic regimes. The results of these analyses provide resolution to several open questions in the literature. The relaxation of more complicated surface structures such as ion-sputtered ripples are also studied and shown to be in excellent agreement with experimental observations. The anisotropic theory of grain-boundary grooving is less well understood as compared to the isotropic theory---the latter has thus been conventionally used to determine grain-boundary energies and diffusion constants even for faceted grooves for which it is strictly not applicable. Faceted groove-roots lead to ambiguities in the equilibrium conditions at the triple-junction and in the relationship between the grain-boundary and facet energies. Analytical studies are used to show that this intricate relationship requires careful consideration of "chemical-torque" at the triple-junction. A simple graphical method for determining groove-profiles is developed. Numerical studies show that Mullins' one-fourth power-law holds even for faceted grooves at high junction-mobilities. Low-mobility junctions not only cause deviations from this scaling but also lead to kinetic groove-shapes that cannot be predicted from the usual evolution equations. Stranski-Krastanov growth in heteroepitaxial thin films provides a simple and cost-effective way of producing nanostructures such as quantum dots and quantum wires by self-assembly. Numerical studies of are used to understand the initial growth instability, spatial ordering and coarsening behavior of quantum dots in SiGe/Si systems.
ISBN: 0542128578Subjects--Topical Terms:
783786
Engineering, Mechanical.
Dynamics and stability of nanostructures on crystal surfaces.
LDR
:03273nmm 2200289 4500
001
1813162
005
20060427133134.5
008
130610s2005 eng d
020
$a
0542128578
035
$a
(UnM)AAI3174661
035
$a
AAI3174661
040
$a
UnM
$c
UnM
100
1
$a
Ramasubramaniam, Ashwin.
$3
1902684
245
1 0
$a
Dynamics and stability of nanostructures on crystal surfaces.
300
$a
200 p.
500
$a
Source: Dissertation Abstracts International, Volume: 66-05, Section: B, page: 2790.
500
$a
Adviser: V. B. Shenoy.
502
$a
Thesis (Ph.D.)--Brown University, 2005.
520
$a
Morphological stability and evolution of nanostructures on crystalline surfaces is studied analytically and numerically. Crystalline surfaces present modeling challenges owing to the infinite stiffness of facets. This work uses variational formulations that naturally handle both rough and singular orientations. The physics of crystallographic steps is used to provide a fundamental basis for the energetics and kinetics of morphological evolution. Investigations are pursued to understand recent experiments where surface energy anisotropy is seen to play an important role. Specifically, the relaxation behavior of surface undulations, the evolution of grain-boundary grooves and Stranski-Krastanov growth in heteroepitaxial systems are studied. The relaxation of surface gratings is studied in conserved and non-conserved kinetic regimes. The results of these analyses provide resolution to several open questions in the literature. The relaxation of more complicated surface structures such as ion-sputtered ripples are also studied and shown to be in excellent agreement with experimental observations. The anisotropic theory of grain-boundary grooving is less well understood as compared to the isotropic theory---the latter has thus been conventionally used to determine grain-boundary energies and diffusion constants even for faceted grooves for which it is strictly not applicable. Faceted groove-roots lead to ambiguities in the equilibrium conditions at the triple-junction and in the relationship between the grain-boundary and facet energies. Analytical studies are used to show that this intricate relationship requires careful consideration of "chemical-torque" at the triple-junction. A simple graphical method for determining groove-profiles is developed. Numerical studies show that Mullins' one-fourth power-law holds even for faceted grooves at high junction-mobilities. Low-mobility junctions not only cause deviations from this scaling but also lead to kinetic groove-shapes that cannot be predicted from the usual evolution equations. Stranski-Krastanov growth in heteroepitaxial thin films provides a simple and cost-effective way of producing nanostructures such as quantum dots and quantum wires by self-assembly. Numerical studies of are used to understand the initial growth instability, spatial ordering and coarsening behavior of quantum dots in SiGe/Si systems.
590
$a
School code: 0024.
650
4
$a
Engineering, Mechanical.
$3
783786
650
4
$a
Applied Mechanics.
$3
1018410
650
4
$a
Engineering, Materials Science.
$3
1017759
690
$a
0548
690
$a
0346
690
$a
0794
710
2 0
$a
Brown University.
$3
766761
773
0
$t
Dissertation Abstracts International
$g
66-05B.
790
1 0
$a
Shenoy, V. B.,
$e
advisor
790
$a
0024
791
$a
Ph.D.
792
$a
2005
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3174661
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9204033
電子資源
11.線上閱覽_V
電子書
EB
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入