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Computation of Semiconductor Device ...

Noaman, Bassam A.

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Computation of Semiconductor Device Noise for Semi-Classical Transport.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Computation of Semiconductor Device Noise for Semi-Classical Transport./
作者:	Noaman, Bassam A.
面頁冊數:	140 p.
附註:	Source: Dissertation Abstracts International, Volume: 72-03, Section: B, page: 1600.
Contained By:	Dissertation Abstracts International72-03B.
標題:	Engineering, General. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3434962
ISBN:	9781124427171

Computation of Semiconductor Device Noise for Semi-Classical Transport.
Noaman, Bassam A.

Computation of Semiconductor Device Noise for Semi-Classical Transport. - 140 p.

Source: Dissertation Abstracts International, Volume: 72-03, Section: B, page: 1600.

Thesis (Ph.D.)--The George Washington University, 2011.

A new model for semiconductor device electronic current noise is presented in the framework of semi-classical transport theory. The salient feature of this model is that it connects the current noise characteristics directly to the physics of scattering described by the semi-classical transport theory and makes no additional assumption regarding the nature of noise. Employing this approach, not only it computes the terminal current noise, it also reveals the spatial origin of the current noise across semiconductor structures. Furthermore, the terminal current noise is directly related to carrier scattering inside the device, which is accounted for in the Boltzmann transport equation (BTE), without the need to add Langevin noise terms to the calculations. Accordingly, it utilizes the well-established spherical harmonics expansion (SHE) technique to solve the (BTE), and it combines analytical and numerical methods, in contrast with the Monte Carlo (MC) approach that employs ensemble averages of randomly generated events. The model shows that the key calculations for computing the current spectral density are reduced to the solution of the (BTE) with special initial condition and boundary conditions at the Ohmic contacts. It is solved in the frequency domain to directly compute the terminal current noise spectral density. It is also shown that with this approach, the Nyquist theorem under thermal equilibrium conditions is recovered.

ISBN: 9781124427171Subjects--Topical Terms:

1020744
Engineering, General.

Computation of Semiconductor Device Noise for Semi-Classical Transport.
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502 $a Thesis (Ph.D.)--The George Washington University, 2011.
520 $a A new model for semiconductor device electronic current noise is presented in the framework of semi-classical transport theory. The salient feature of this model is that it connects the current noise characteristics directly to the physics of scattering described by the semi-classical transport theory and makes no additional assumption regarding the nature of noise. Employing this approach, not only it computes the terminal current noise, it also reveals the spatial origin of the current noise across semiconductor structures. Furthermore, the terminal current noise is directly related to carrier scattering inside the device, which is accounted for in the Boltzmann transport equation (BTE), without the need to add Langevin noise terms to the calculations. Accordingly, it utilizes the well-established spherical harmonics expansion (SHE) technique to solve the (BTE), and it combines analytical and numerical methods, in contrast with the Monte Carlo (MC) approach that employs ensemble averages of randomly generated events. The model shows that the key calculations for computing the current spectral density are reduced to the solution of the (BTE) with special initial condition and boundary conditions at the Ohmic contacts. It is solved in the frequency domain to directly compute the terminal current noise spectral density. It is also shown that with this approach, the Nyquist theorem under thermal equilibrium conditions is recovered.
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790 1 0 $a Doroslovacki, Milos $e committee member
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790 1 0 $a Suehle, John $e committee member
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