東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Computation of Semiconductor Device ...

Noaman, Bassam A.

Linked to FindBook

Google Book

Amazon

博客來

Computation of Semiconductor Device Noise for Semi-Classical Transport.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Computation of Semiconductor Device Noise for Semi-Classical Transport./
Author:	Noaman, Bassam A.
Description:	140 p.
Notes:	Source: Dissertation Abstracts International, Volume: 72-03, Section: B, page: 1600.
Contained By:	Dissertation Abstracts International72-03B.
Subject:	Engineering, General. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3434962
ISBN:	9781124427171

Computation of Semiconductor Device Noise for Semi-Classical Transport.
Noaman, Bassam A.

Computation of Semiconductor Device Noise for Semi-Classical Transport. - 140 p.

Source: Dissertation Abstracts International, Volume: 72-03, Section: B, page: 1600.

Thesis (Ph.D.)--The George Washington University, 2011.

A new model for semiconductor device electronic current noise is presented in the framework of semi-classical transport theory. The salient feature of this model is that it connects the current noise characteristics directly to the physics of scattering described by the semi-classical transport theory and makes no additional assumption regarding the nature of noise. Employing this approach, not only it computes the terminal current noise, it also reveals the spatial origin of the current noise across semiconductor structures. Furthermore, the terminal current noise is directly related to carrier scattering inside the device, which is accounted for in the Boltzmann transport equation (BTE), without the need to add Langevin noise terms to the calculations. Accordingly, it utilizes the well-established spherical harmonics expansion (SHE) technique to solve the (BTE), and it combines analytical and numerical methods, in contrast with the Monte Carlo (MC) approach that employs ensemble averages of randomly generated events. The model shows that the key calculations for computing the current spectral density are reduced to the solution of the (BTE) with special initial condition and boundary conditions at the Ohmic contacts. It is solved in the frequency domain to directly compute the terminal current noise spectral density. It is also shown that with this approach, the Nyquist theorem under thermal equilibrium conditions is recovered.

ISBN: 9781124427171Subjects--Topical Terms:

1020744
Engineering, General.

Computation of Semiconductor Device Noise for Semi-Classical Transport.
LDR:02595nam 2200337 4500 001 1401488
005 20111020092011.5
008 130515s2011 ||||||||||||||||| ||eng d
020 $a 9781124427171
035 $a (UMI)AAI3434962
035 $a AAI3434962
040 $a UMI $c UMI
100 1 $a Noaman, Bassam A. $3 1680629
245 1 0 $a Computation of Semiconductor Device Noise for Semi-Classical Transport.
300 $a 140 p.
500 $a Source: Dissertation Abstracts International, Volume: 72-03, Section: B, page: 1600.
500 $a Adviser: Can E. Kormman.
502 $a Thesis (Ph.D.)--The George Washington University, 2011.
520 $a A new model for semiconductor device electronic current noise is presented in the framework of semi-classical transport theory. The salient feature of this model is that it connects the current noise characteristics directly to the physics of scattering described by the semi-classical transport theory and makes no additional assumption regarding the nature of noise. Employing this approach, not only it computes the terminal current noise, it also reveals the spatial origin of the current noise across semiconductor structures. Furthermore, the terminal current noise is directly related to carrier scattering inside the device, which is accounted for in the Boltzmann transport equation (BTE), without the need to add Langevin noise terms to the calculations. Accordingly, it utilizes the well-established spherical harmonics expansion (SHE) technique to solve the (BTE), and it combines analytical and numerical methods, in contrast with the Monte Carlo (MC) approach that employs ensemble averages of randomly generated events. The model shows that the key calculations for computing the current spectral density are reduced to the solution of the (BTE) with special initial condition and boundary conditions at the Ohmic contacts. It is solved in the frequency domain to directly compute the terminal current noise spectral density. It is also shown that with this approach, the Nyquist theorem under thermal equilibrium conditions is recovered.
590 $a School code: 0075.
650 4 $a Engineering, General. $3 1020744
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0537
690 $a 0544
710 2 $a The George Washington University. $b Electrical Engineering. $3 1035543
773 0 $t Dissertation Abstracts International $g 72-03B.
790 1 0 $a Kormman, Can E., $e advisor
790 1 0 $a Zaghloul, Mona $e committee member
790 1 0 $a Wasylkiwskyj, Wasyl $e committee member
790 1 0 $a Doroslovacki, Milos $e committee member
790 1 0 $a Nagel, David $e committee member
790 1 0 $a Suehle, John $e committee member
790 $a 0075
791 $a Ph.D.
792 $a 2011
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3434962