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Atomic and electronic structures of ...

Shen, Jian.

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Atomic and electronic structures of oxides on III-V semiconductors.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Atomic and electronic structures of oxides on III-V semiconductors./
作者:	Shen, Jian.
面頁冊數:	148 p.
附註:	Source: Dissertation Abstracts International, Volume: 71-09, Section: B, page: 5492.
Contained By:	Dissertation Abstracts International71-09B.
標題:	Chemistry, Physical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3418934
ISBN:	9781124179964

Atomic and electronic structures of oxides on III-V semiconductors.
Shen, Jian.

Atomic and electronic structures of oxides on III-V semiconductors. - 148 p.

Source: Dissertation Abstracts International, Volume: 71-09, Section: B, page: 5492.

Thesis (Ph.D.)--University of California, San Diego, 2010.

The surface reconstructions of decapped InAs(001) and In 0.53Ga0.47As(001) have been studied using scanning tunneling microscopy (STM). Quantitative comparison of the In0.53Ga 0.47As(001)-(4x2) and InAs(001)-(4x2) show the reconstructions are almost identical, but In0.53Ga0.47As(001)-(4x2) has at least a 4x higher surface defect density even on the best samples. For both In0.53Ga0.47As(001)-(4x2) and InAs(001)-(4x2), density functional theory (DFT) simulations at elevated temperature are consistent with the experimentally observed 300 K structure being a thermal superposition of three structures.

ISBN: 9781124179964Subjects--Topical Terms:

560527
Chemistry, Physical.

Atomic and electronic structures of oxides on III-V semiconductors.
LDR:02814nam 2200337 4500 001 1401440
005 20111020091955.5
008 130515s2010 ||||||||||||||||| ||eng d
020 $a 9781124179964
035 $a (UMI)AAI3418934
035 $a AAI3418934
040 $a UMI $c UMI
100 1 $a Shen, Jian. $3 1680574
245 1 0 $a Atomic and electronic structures of oxides on III-V semiconductors.
300 $a 148 p.
500 $a Source: Dissertation Abstracts International, Volume: 71-09, Section: B, page: 5492.
500 $a Adviser: Andrew C. Kummel.
502 $a Thesis (Ph.D.)--University of California, San Diego, 2010.
520 $a The surface reconstructions of decapped InAs(001) and In 0.53Ga0.47As(001) have been studied using scanning tunneling microscopy (STM). Quantitative comparison of the In0.53Ga 0.47As(001)-(4x2) and InAs(001)-(4x2) show the reconstructions are almost identical, but In0.53Ga0.47As(001)-(4x2) has at least a 4x higher surface defect density even on the best samples. For both In0.53Ga0.47As(001)-(4x2) and InAs(001)-(4x2), density functional theory (DFT) simulations at elevated temperature are consistent with the experimentally observed 300 K structure being a thermal superposition of three structures.
520 $a The passivation of InAs(001) and InGaAs(001) surface using three different oxides (SiO, Ga2O and In2O) was studied using STM, STS, and DFT modeling of bonding and electronic structures. SiO molecules have higher self-binding energy so that they bond themselves and form nanoclusters on InAs(001)-(4x2) surface. Conversely, both Ga2O and In 2O molecules bond to the As atoms at the edge of the rows. However, Ga2O molecules also bond to preexisting Ga2O oxide on the surface. At full coverage with post-deposition annealing, SiO oxide remains as nanoclusters, Ga2O oxide forms disordered structures with the large flat terraces on the surface, while In2O oxide bonds with the trough In atoms to form new O-In bonding sites and forms ordered structures running in the [110] direction on In0.53Ga0.47As(001)-(4x2). STS results show that Ga2O oxide does not passivate the interface nor unpin the In0.53Ga0.47As(001)-(4x2) surface consistent with its inability to form monolayer ordered islands on the surface; conversely, In2O/In0.53Ga0.47As(001)-(4x2) has an ordered monolayer coverage and is unpinned.
590 $a School code: 0033.
650 4 $a Chemistry, Physical. $3 560527
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0494
690 $a 0794
710 2 $a University of California, San Diego. $b Materials Sci and Engineering. $3 1023651
773 0 $t Dissertation Abstracts International $g 71-09B.
790 1 0 $a Kummel, Andrew C., $e advisor
790 1 0 $a Bandaru, Prabhakar R. $e committee member
790 1 0 $a Asbeck, Peter M. $e committee member
790 1 0 $a Taur, Yuan $e committee member
790 1 0 $a Tu, Charles W. $e committee member
790 $a 0033
791 $a Ph.D.
792 $a 2010
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3418934