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Perpendicular magnetic anisotropy ma...

Tadisina, Zeenath Reddy.

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Perpendicular magnetic anisotropy materials for reduced current switching devices.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Perpendicular magnetic anisotropy materials for reduced current switching devices./
Author:	Tadisina, Zeenath Reddy.
Description:	100 p.
Notes:	Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4480.
Contained By:	Dissertation Abstracts International71-07B.
Subject:	Physics, Condensed Matter. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3409056
ISBN:	9781124060637

Perpendicular magnetic anisotropy materials for reduced current switching devices.
Tadisina, Zeenath Reddy.

Perpendicular magnetic anisotropy materials for reduced current switching devices. - 100 p.

Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4480.

Thesis (Ph.D.)--The University of Alabama, 2010.

Recently, spin-transfer switching of magnetic tunnel junctions (MTJs) has become a very active area of research. It is theoretically postulated that using perpendicular magnetic anisotropy materials will substantially reduce the critical current density for switching, resulting in lower energy devices, while keeping the thermal stability high. A range of perpendicular anisotropy material systems, including (i) multilayers, (ii) crystalline alloys, and (iii) amorphous alloys have been intensively studied in this dissertation. The surface and bulk anisotropy, damping parameter, and structural properties of these material systems have been investigated. Magnetic tunnel junctions based on some of these perpendicular material schemes have been fabricated, and their transport properties have been measured and related to the anisotropy. We have found several promising approaches to magnetic tunnel junctions utilized in spin-torque transfer random access memory (STT-RAM).

ISBN: 9781124060637Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Perpendicular magnetic anisotropy materials for reduced current switching devices.
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020 $a 9781124060637
035 $a (UMI)AAI3409056
035 $a AAI3409056
040 $a UMI $c UMI
100 1 $a Tadisina, Zeenath Reddy. $3 1672861
245 1 0 $a Perpendicular magnetic anisotropy materials for reduced current switching devices.
300 $a 100 p.
500 $a Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4480.
500 $a Adviser: Subhadra Gupta.
502 $a Thesis (Ph.D.)--The University of Alabama, 2010.
520 $a Recently, spin-transfer switching of magnetic tunnel junctions (MTJs) has become a very active area of research. It is theoretically postulated that using perpendicular magnetic anisotropy materials will substantially reduce the critical current density for switching, resulting in lower energy devices, while keeping the thermal stability high. A range of perpendicular anisotropy material systems, including (i) multilayers, (ii) crystalline alloys, and (iii) amorphous alloys have been intensively studied in this dissertation. The surface and bulk anisotropy, damping parameter, and structural properties of these material systems have been investigated. Magnetic tunnel junctions based on some of these perpendicular material schemes have been fabricated, and their transport properties have been measured and related to the anisotropy. We have found several promising approaches to magnetic tunnel junctions utilized in spin-torque transfer random access memory (STT-RAM).
590 $a School code: 0004.
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Engineering, Metallurgy. $3 1023648
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0611
690 $a 0743
690 $a 0794
710 2 $a The University of Alabama. $b Metallurgical/Materials Engineering. $3 1672862
773 0 $t Dissertation Abstracts International $g 71-07B.
790 1 0 $a Gupta, Subhadra, $e advisor
790 1 0 $a Reddy, Ramana G. $e committee member
790 1 0 $a Thompson, Gregory B. $e committee member
790 1 0 $a Mewes, Tim $e committee member
790 1 0 $a LeClair, Patrick R. $e committee member
790 1 0 $a Vaidya, Uday K. $e committee member
790 $a 0004
791 $a Ph.D.
792 $a 2010
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3409056