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Gallium nitride-enabled high frequen...
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Meneghesso, Gaudenzio.
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Gallium nitride-enabled high frequency and high efficiency power conversion
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Gallium nitride-enabled high frequency and high efficiency power conversion/ edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.
其他作者:
Meneghesso, Gaudenzio.
出版者:
Cham :Springer International Publishing : : 2018.,
面頁冊數:
xiii, 232 p. :ill. (some col.), digital ;24 cm.
內容註:
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.
Contained By:
Springer eBooks
標題:
Semiconductors - Materials. -
電子資源:
http://dx.doi.org/10.1007/978-3-319-77994-2
ISBN:
9783319779942
Gallium nitride-enabled high frequency and high efficiency power conversion
Gallium nitride-enabled high frequency and high efficiency power conversion
[electronic resource] /edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. - Cham :Springer International Publishing :2018. - xiii, 232 p. :ill. (some col.), digital ;24 cm. - Integrated circuits and systems,1558-9412. - Integrated circuits and systems..
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
ISBN: 9783319779942
Standard No.: 10.1007/978-3-319-77994-2doiSubjects--Topical Terms:
553292
Semiconductors
--Materials.
LC Class. No.: TK7871.85 / .G355 2018
Dewey Class. No.: 621.38152
Gallium nitride-enabled high frequency and high efficiency power conversion
LDR
:02577nmm a2200325 a 4500
001
2146071
003
DE-He213
005
20181123105940.0
006
m d
007
cr nn 008maaau
008
190227s2018 gw s 0 eng d
020
$a
9783319779942
$q
(electronic bk.)
020
$a
9783319779935
$q
(paper)
024
7
$a
10.1007/978-3-319-77994-2
$2
doi
035
$a
978-3-319-77994-2
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
TK7871.85
$b
.G355 2018
072
7
$a
TJFC
$2
bicssc
072
7
$a
TEC008010
$2
bisacsh
082
0 4
$a
621.38152
$2
23
090
$a
TK7871.85
$b
.G171 2018
245
0 0
$a
Gallium nitride-enabled high frequency and high efficiency power conversion
$h
[electronic resource] /
$c
edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.
260
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2018.
300
$a
xiii, 232 p. :
$b
ill. (some col.), digital ;
$c
24 cm.
490
1
$a
Integrated circuits and systems,
$x
1558-9412
505
0
$a
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.
520
$a
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
650
0
$a
Semiconductors
$x
Materials.
$3
553292
650
0
$a
Gallium nitride.
$3
700928
650
0
$a
Transistors.
$3
713271
650
1 4
$a
Engineering.
$3
586835
650
2 4
$a
Circuits and Systems.
$3
896527
650
2 4
$a
Electronic Circuits and Devices.
$3
1245773
650
2 4
$a
Optical and Electronic Materials.
$3
891120
700
1
$a
Meneghesso, Gaudenzio.
$3
3217031
700
1
$a
Meneghini, Matteo.
$3
3217030
700
1
$a
Zanoni, Enrico.
$3
3217032
710
2
$a
SpringerLink (Online service)
$3
836513
773
0
$t
Springer eBooks
830
0
$a
Integrated circuits and systems.
$3
2088970
856
4 0
$u
http://dx.doi.org/10.1007/978-3-319-77994-2
950
$a
Engineering (Springer-11647)
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