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Engineering the Excitonic and Photonic Properties of Atomically Thin Semiconductors.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Engineering the Excitonic and Photonic Properties of Atomically Thin Semiconductors./
作者:	Gelly, Ryan Joseph.
面頁冊數:	1 online resource (228 pages)
附註:	Source: Dissertations Abstracts International, Volume: 84-09, Section: B.
Contained By:	Dissertations Abstracts International84-09B.
標題:	Physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29996959click for full text (PQDT)
ISBN:	9798377622130

Engineering the Excitonic and Photonic Properties of Atomically Thin Semiconductors.
Gelly, Ryan Joseph.

Engineering the Excitonic and Photonic Properties of Atomically Thin Semiconductors. - 1 online resource (228 pages)

Source: Dissertations Abstracts International, Volume: 84-09, Section: B.

Thesis (Ph.D.)--Harvard University, 2023.

Includes bibliographical references

Atomically thin and layered semiconductors are of broad interest to the physics and engineering communities in the past decade. As true members of the mesoscale, such materials have exotic and potentially advantageous properties not found in bulk semiconductors. Using materials like the transition metal dichalcogenides or hexagonal boron nitride for novel optoelectronic and nanophotonic devices requires (i) a fundamental understanding of the optical properties of their excitons and (ii) techniques for engineering the emission of light by excitons. This thesis addresses both points and demonstrates how the radiative properties of excitons in various van der Waals materials can be controlled by photonic environment engineering. Several examples of this engineering include: steering the reflection of a laser off a MoSe2 monolayer by spatially modulating the charge profile in the monolayer; electromechanically modifying the radiative decay rate of excitons by their proximity to a mirror; efficiently extracting dark excitons from a nanoscale strain landscape by tapered optical fibers; and Purcell enhancing exciton emission in boron nitride nanophotonic cavities.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798377622130Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

Atomically thinIndex Terms--Genre/Form:

542853
Electronic books.

Engineering the Excitonic and Photonic Properties of Atomically Thin Semiconductors.
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504 $a Includes bibliographical references
520 $a Atomically thin and layered semiconductors are of broad interest to the physics and engineering communities in the past decade. As true members of the mesoscale, such materials have exotic and potentially advantageous properties not found in bulk semiconductors. Using materials like the transition metal dichalcogenides or hexagonal boron nitride for novel optoelectronic and nanophotonic devices requires (i) a fundamental understanding of the optical properties of their excitons and (ii) techniques for engineering the emission of light by excitons. This thesis addresses both points and demonstrates how the radiative properties of excitons in various van der Waals materials can be controlled by photonic environment engineering. Several examples of this engineering include: steering the reflection of a laser off a MoSe2 monolayer by spatially modulating the charge profile in the monolayer; electromechanically modifying the radiative decay rate of excitons by their proximity to a mirror; efficiently extracting dark excitons from a nanoscale strain landscape by tapered optical fibers; and Purcell enhancing exciton emission in boron nitride nanophotonic cavities.
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538 $a Mode of access: World Wide Web
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650 4 $a Condensed matter physics. $3 3173567
650 4 $a Optics. $3 517925
653 $a Atomically thin
653 $a Semiconductors
653 $a Photonic properties
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